Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"

M. Adell; J. Kanski; L. Ilver; V. Stanciu; P. Svedlindh

doi:10.1103/PhysRevLett.94.139701

Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"

Materials Science 2009-11-10 v1

Authors: M. Adell , J. Kanski , L. Ilver , V. Stanciu , P. Svedlindh

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Abstract

The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion of Mn interstitials. We show that the annealing-induced modifications are strongly accelerated if the treatment is carried out under As capping. This means that the modification rate is not limited by the diffusion process, but rather by the surface trapping of the diffusing species.

Cite

@article{arxiv.cond-mat/0412006,
  title  = {Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"},
  author = {M. Adell and J. Kanski and L. Ilver and V. Stanciu and P. Svedlindh},
  journal= {arXiv preprint arXiv:cond-mat/0412006},
  year   = {2009}
}

Comments

4 pages, 1 figure

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