Diffusion of Mn through GaAs barrier

J. Adell; I. Ulfat; L. Ilver; J. Sadowski; J. Kanski

Diffusion of Mn through GaAs barrier

Materials Science 2009-12-24 v1

Authors: J. Adell , I. Ulfat , L. Ilver , J. Sadowski , J. Kanski

Abstract

Thermally stimulated diffusion of Mn across the (Ga,Mn)As/GaAs interface has been studied by X-ray photoemission. Ga(0.95)Mn(0.05)As layers were capped with GaAs of different thickness 4, 6 and 8ML, and Mn diffusing through the GaAs layers was trapped on the surface by means of amorphous As covering the surface. It was found that the out diffusion is strongly reduced for the 6 ML GaAs film, and for the 8 ML film no Mn could be detected.

Keywords

semiconductor nanowire growth

Cite

@article{arxiv.0912.4680,
  title  = {Diffusion of Mn through GaAs barrier},
  author = {J. Adell and I. Ulfat and L. Ilver and J. Sadowski and J. Kanski},
  journal= {arXiv preprint arXiv:0912.4680},
  year   = {2009}
}

Comments

9 pages, 3 figures

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