Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

J. F. Xu; P. M. Thibado; C. Awo-Affouda; F. Ramos; V. P. LaBella

doi:10.1116/1.2746351

Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

Mesoscale and Nanoscale Physics 2015-06-24 v1 Materials Science

Authors: J. F. Xu , P. M. Thibado , C. Awo-Affouda , F. Ramos , V. P. LaBella

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Abstract

Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 {\deg}C using various Mn cell temperatures have been investigated with dynamic secondary ion mass spectrometry and Auger electron spectroscopy. When the samples are grown at a low substrate temperature of 250 {\deg}C, the Mn distributes uniformly. For the samples grown at a high substrate temperature of 580 {\deg}C, the concentration depth profiles are easily fitted with a temperature-dependent Fermi function only if the Mn concentration is above the solubility limit. However, when the Mn concentration is below the solubility limit, unexpected peaks are observed in the concentration depth profiles.

Keywords

GaMnAs molecular beam epitaxy depth profiles Mn concentration solubility limit secondary ion mass spectrometry Auger electron spectroscopy

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@article{arxiv.1502.06879,
  title  = {Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy},
  author = {J. F. Xu and P. M. Thibado and C. Awo-Affouda and F. Ramos and V. P. LaBella},
  journal= {arXiv preprint arXiv:1502.06879},
  year   = {2015}
}

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10 pages, 4 figures

Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

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