We have performed an in-situ depth profile study of Mn-doped GaN prepared by a low temperature thermal diffusion method using photoemission and x-ray absorption spectroscopy. It was revealed from the core-level photoemission measurements that Mn ions are diffused into a deep (∼ 70 \AA) region of the GaN substrates and that the line shapes of Mn 3d partial density of states obtained by resonant photoemission measurements was close to that of Ga1−xMnxN thin films grown by molecular-beam epitaxy. From x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Mn L-edge, it was revealed that the doped Mn ions were in the divalent Mn2+ state and primarily paramagnetic. In magnetization measurements, weak hysteresis was detected in samples prepared using p-type GaN substrates while samples using n-type GaN substrates showed only paramagnetism.
@article{arxiv.cond-mat/0703429,
title = {Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion},
author = {J. I. Hwang and Y. Osafune and M. Kobayashi and K. Ebata and Y. Ooki and Y. Ishida and A. Fujimori and Y. Takeda and T. Okane and Y. Saitoh and K. Kobayashi and A. Tanaka},
journal= {arXiv preprint arXiv:cond-mat/0703429},
year = {2009}
}