We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribution is indicated by transmission electron microscopy, no Mn-rich clusters are present for optimized growth conditions. A linear increase of the c-lattice parameter with increasing Mn concentration is found using x-ray diffraction. The ferromagnetic behavior is confirmed by superconducting quantum-interference measurements showing saturation magnetizations of up to 150 emu/cm^3.
@article{arxiv.1205.3475,
title = {GaMnN epitaxial films with high magnetization},
author = {Gerd Kunert and Sylwia Dobkowska and Tian Li and Helfried Reuther and Carsten Kruse and Stephan Figge and Rafal Jakiela and Alberta Bonanni and Jörg Grenzer and Wiktor Stefanowicz and Maciej Sawicki and Tomasz Dietl and Detlef Hommel},
journal= {arXiv preprint arXiv:1205.3475},
year = {2014}
}
Comments
5 pages, 5 postscript figures, typo corrected, to appear in Applied Physics Letters Journal