Highly resistive epitaxial Mg-doped GdN thin films

C. -M. Lee; H. Warring; S. Vézian; B. Damilano; S. Granville; M. Al Khalfioui; Y. Cordier; H. J. Trodahl; B. J. Ruck; F. Natali

doi:10.1063/1.4905598

Highly resistive epitaxial Mg-doped GdN thin films

Materials Science 2015-06-23 v1 Strongly Correlated Electrons

Authors: C. -M. Lee , H. Warring , S. Vézian , B. Damilano , S. Granville , M. Al Khalfioui , Y. Cordier , H. J. Trodahl , B. J. Ruck , F. Natali

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Abstract

We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 {\Omega}.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali et al., Phys. Rev. B 87, 035202 (2013)].

Keywords

GdN thin films molecular beam epitaxy Mg doping resistivity Curie temperature magnetic polaron X-ray diffraction

Cite

@article{arxiv.1410.8228,
  title  = {Highly resistive epitaxial Mg-doped GdN thin films},
  author = {C. -M. Lee and H. Warring and S. Vézian and B. Damilano and S. Granville and M. Al Khalfioui and Y. Cordier and H. J. Trodahl and B. J. Ruck and F. Natali},
  journal= {arXiv preprint arXiv:1410.8228},
  year   = {2015}
}

Highly resistive epitaxial Mg-doped GdN thin films

Abstract

Keywords

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