Epitaxial EuO Thin Films on GaAs

A. G. Swartz; J. Ciraldo; J. J. I. Wong; Yan Li; Wei Han; Tao Lin; S. Mack; J. Shi; D. D. Awschalom; R. K. Kawakami

doi:10.1063/1.3490649

Epitaxial EuO Thin Films on GaAs

Materials Science 2010-09-22 v2

Authors: A. G. Swartz , J. Ciraldo , J. J. I. Wong , Yan Li , Wei Han , Tao Lin , S. Mack , J. Shi , D. D. Awschalom , R. K. Kawakami

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Abstract

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57{\deg}, a significant remanent magnetization, and a Curie temperature of 69 K.

Keywords

epitaxial thin films thin films semiconductor nanowire growth

Cite

@article{arxiv.1008.0898,
  title  = {Epitaxial EuO Thin Films on GaAs},
  author = {A. G. Swartz and J. Ciraldo and J. J. I. Wong and Yan Li and Wei Han and Tao Lin and S. Mack and J. Shi and D. D. Awschalom and R. K. Kawakami},
  journal= {arXiv preprint arXiv:1008.0898},
  year   = {2010}
}

Comments

5 pages, 3 figures

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