K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering

Dongyi Qin; Kazumasa Iida; Zimeng Guo; Chao Wang; Hikaru Saito; Satoshi Hata; Michio Naito; Akiyasu Yamamoto

doi:10.1088/1361-6668/ac8025

K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering

Superconductivity 2022-07-15 v1

Authors: Dongyi Qin , Kazumasa Iida , Zimeng Guo , Chao Wang , Hikaru Saito , Satoshi Hata , Michio Naito , Akiyasu Yamamoto

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Abstract

Molecular beam epitaxy of K-doped Ba122 (Ba $_{1-x}$ K $_x$ Fe $_\text{2}$ As $_\text{2}$ ) superconductor was realized on a MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA/cm $^\text{2}$ at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.

Keywords

epitaxial thin films thin films semiconductor nanowire growth

Cite

@article{arxiv.2207.06629,
  title  = {K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering},
  author = {Dongyi Qin and Kazumasa Iida and Zimeng Guo and Chao Wang and Hikaru Saito and Satoshi Hata and Michio Naito and Akiyasu Yamamoto},
  journal= {arXiv preprint arXiv:2207.06629},
  year   = {2022}
}

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5 pages, 4 figures, accepted manuscript Supercond. Sci. Technol 2022

K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering

Abstract

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