The electrical and magnetic properties of p-type cubic (Ga,Mn)N thin films grown by plasma-assisted molecular beam epitaxy are reported. Hole concentrations in excess of 1018 cm-3 at room temperature are observed. Activated behaviour is observed down to around 150K, characterised by an acceptor ionisation energy of around 45-60meV. The dependence of hole concentration and ionisation energy on Mn concentration indicates that the shallow acceptor level is not simply due to unintentional co-doping. Thermopower measurements on freestanding films, CV profilometry, and the dependence of conductivity on thickness and growth temperature, all show that the conduction is not due to diffusion into the substrate. We therefore associate the p-type conductivity with the presence of the Mn in the cubic GaN films. Magnetometry measurements indicate a small room temperature ferromagnetic phase, and a significantly larger magnetic coupling at low temperatures.
@article{arxiv.cond-mat/0411476,
title = {Transport and Magnetism in p-type cubic (Ga,Mn)N},
author = {KW Edmonds and SV Novikov and M Sawicki and RP Campion and C. R. Staddon and AD Giddings and LX Zhao and KY Wang and T Dietl and CT Foxon and BL Gallagher},
journal= {arXiv preprint arXiv:cond-mat/0411476},
year = {2014}
}