Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces

Y. Osafune; G. S. Song; J. I. Hwang; Y. Ishida; M. Kobayashi; K. Ebata; Y. Ooki; A. Fujimori; J. Okabayashi; K. Kanai; K. Kubo; M. Oshima

doi:10.1063/1.2931040

Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces

Materials Science 2008-06-08 v2 Strongly Correlated Electrons

Authors: Y. Osafune , G. S. Song , J. I. Hwang , Y. Ishida , M. Kobayashi , K. Ebata , Y. Ooki , A. Fujimori , J. Okabayashi , K. Kanai , K. Kubo , M. Oshima

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Abstract

We have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar $^+$ -ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs substrate and completely reacted with GaAs. In the deep region, the Mn 2 $p$ core-level and Mn 3 $d$ valence-band spectra of the Mn/GaAs (001) sample heated to 600 $^{\circ}$ C were similar to those of Ga $_{1-x}$ Mn $_x$ As, zinc-blende-type MnAs dots, and/or interstitial Mn in tetrahedrally coordinated by As atoms, suggesting that the Mn 3 $d$ states were essentially localized but were hybridized with the electronic states of the host GaAs. Ferromagnetism was observed in the dilute Mn phase.

Keywords

semiconductor nanowire growth

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@article{arxiv.0711.3257,
  title  = {Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces},
  author = {Y. Osafune and G. S. Song and J. I. Hwang and Y. Ishida and M. Kobayashi and K. Ebata and Y. Ooki and A. Fujimori and J. Okabayashi and K. Kanai and K. Kubo and M. Oshima},
  journal= {arXiv preprint arXiv:0711.3257},
  year   = {2008}
}

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5 pages, 4 figures

Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces

Abstract

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