(Ga,Mn)As on patterned GaAs(001) substrates: Growth and magnetotransport

W. Limmer; J. Daeubler; M. Glunk; T. Hummel; W. Schoch; R. Sauer

(Ga,Mn)As on patterned GaAs(001) substrates: Growth and magnetotransport

Materials Science 2007-05-23 v1

Authors: W. Limmer , J. Daeubler , M. Glunk , T. Hummel , W. Schoch , R. Sauer

Abstract

A new type of (Ga,Mn)As microstructures with laterally confined electronic and magnetic properties has been realized by growing (Ga,Mn)As films on [1-10]-oriented ridge structures with (113)A sidewalls and (001) top layers prepared on GaAs(001) substrates. The temperature- and field-dependent magnetotransport data of the overgrown structures are compared with those obtained from planar reference samples revealing the coexistence of electronic and magnetic properties specific for (001) and (113)A (Ga,Mn)As on a single sample.

Keywords

(Ga,Mn)As patterned substrates magnetotransport ridge structures molecular beam epitaxy

Cite

@article{arxiv.cond-mat/0607685,
  title  = {(Ga,Mn)As on patterned GaAs(001) substrates: Growth and magnetotransport},
  author = {W. Limmer and J. Daeubler and M. Glunk and T. Hummel and W. Schoch and R. Sauer},
  journal= {arXiv preprint arXiv:cond-mat/0607685},
  year   = {2007}
}

Comments

3 pages, 4 figures, accepted for publication in Microelectronics Journal

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