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Molecular beam epitaxy of CuMnAs

Materials Science 2020-02-05 v1

Abstract

We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.

Keywords

Cite

@article{arxiv.1911.01794,
  title  = {Molecular beam epitaxy of CuMnAs},
  author = {Filip Krizek and Zdeněk Kašpar and Aliaksei Vetushka and Dominik Kriegner and Elisabetta M. Fiordaliso and Jan Michalicka and Ondřej Man and Jan Zubáč and Martin Brajer and Victoria A. Hills and Kevin W. Edmonds and Peter Wadley and Richard P. Campion and Kamil Olejník and Tomáš Jungwirth and Vít Novák},
  journal= {arXiv preprint arXiv:1911.01794},
  year   = {2020}
}

Comments

10 pages, 8 figures and supplementary material