Metamorphic InAs/InGaAs QWs with electron mobilities exceeding $7\times10^5cm^2/Vs$

A. Benali; P. Rajak; R. Ciancio; J. R. Plaisier; S. Heun; G. Biasiol

doi:10.1016/j.jcrysgro.2022.126768

Metamorphic InAs/InGaAs QWs with electron mobilities exceeding $7\times10^5cm^2/Vs$

Materials Science 2022-07-12 v1 Mesoscale and Nanoscale Physics Quantum Physics

Authors: A. Benali , P. Rajak , R. Ciancio , J. R. Plaisier , S. Heun , G. Biasiol

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Abstract

We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer layer, virtually unstrained InGaAs barriers embedding an InAs quantum well with thickness up to 7nm can be grown. This allows reaching low-temperature electron mobilities much higher than previously reported for samples obtained by metamorphic growth on GaAs, and comparable to the values achieved for samples grown on InP substrates.

Keywords

metamorphic quantum wells inasi/ingaas electron mobility molecular beam epitaxy strain relaxation inalas buffer

Cite

@article{arxiv.2206.11590,
  title  = {Metamorphic InAs/InGaAs QWs with electron mobilities exceeding $7\times10^5cm^2/Vs$},
  author = {A. Benali and P. Rajak and R. Ciancio and J. R. Plaisier and S. Heun and G. Biasiol},
  journal= {arXiv preprint arXiv:2206.11590},
  year   = {2022}
}

Metamorphic InAs/InGaAs QWs with electron mobilities exceeding $7\times10^5cm^2/Vs$

Abstract

Keywords

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