We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is based on a gradient deposition of InAs in the sub-ML regime and subsequent capping with an InGaA strain-reducing layer to redshift the emission wavelength. For different growth conditions, we investigate the optical properties of the dots using photoluminescence mapping and correlate with structural properties determined by scanning transmission electron microscopy. Using a surface roughness modulation technique and synchronizing InAs sub-monolayer deposition cycles with substrate rotation, we control the dot density and position low-density regions (< 1 QD per um^2) on the substrate. Hyperspectral imaging is used to map the spatial and spectral characteristics of many individual dots in the low-density region, confirming that our approach is universally applicable to conventional MBE growth on (001) surfaces. Finally, we tune the QD emission wavelength within the O-band using electric fields and demonstrate single-photon emission with g(2)(0) = 0.020(14).
@article{arxiv.2603.29934,
title = {Molecular beam epitaxy of wafer-scale O-band InAs/InGaAs quantum dots on GaAs for quantum photonics},
author = {Pavel S. Avdienko and Lukas Hanschke and Quirin Buchinger and Nikolai Bart and Hubert Riedl and Bianca Scaparra and Yu Xia and Ziria Herdegen and Knut Müller-Caspary and Gregor Koblmüller and Tobias Huber-Loyola and Arne Ludwig and Andreas Pfenning and Sven Höfling and Kai Müller and Jonathan J. Finley},
journal= {arXiv preprint arXiv:2603.29934},
year = {2026}
}