The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared band ({\lambda}~700-1000 nm), several challenges have yet to be addressed for ideal single photon emission at the telecommunication band. In this study, we present a droplet-epitaxy strategy for O-band to C-band single-photon source based semiconductor quantum dots (QDs) using metal-organic vapor-phase epitaxy (MOVPE). Via investigating the growth conditions of the epitaxial process, we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of {\lambda}~1200-1600 nm. The morphological and optical properties of the samples were characterized using atomic force microscopy and micro photoluminescence spectroscopy. The recorded single-photon purity of a plain QD structure reaches (g(2)(0) = 0.16), with a radiative recombination lifetime as short as 1.5 ns. This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands, offering significant prospects for quantum network applications.
@article{arxiv.2511.16894,
title = {Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy},
author = {Shichen Zhang and Li Liu and Kai Guo and Xingli Mu and Yuanfei Gao and Junqi Liu and Fengqi Liu and Quanyong Lu and Zhiliang Yuan},
journal= {arXiv preprint arXiv:2511.16894},
year = {2025}
}