Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots

P. Hazdra; J. Voves; J. Oswald; K. Kuldova; A. Hospodkova; E. Hulicius; J. Pangrac

Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots

Materials Science 2007-08-13 v1

Authors: P. Hazdra , J. Voves , J. Oswald , K. Kuldova , A. Hospodkova , E. Hulicius , J. Pangrac

Abstract

Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence in combination with photomodulated reflectance spectroscopy were used as the main characterisation methods for the growth optimisation. Results show that photoreflectance spectroscopy is an excellent tool for characterisation of QD structures wetting layers (thickness and composition) and for identification of spacers in vertically stacked QDs structures.

Keywords

InAs/GaAs quantum dots metal-organic vapour phase epitaxy MOVPE optical characterisation photoluminescence photomodulated reflectance wetting layers

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@article{arxiv.0708.1468,
  title  = {Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots},
  author = {P. Hazdra and J. Voves and J. Oswald and K. Kuldova and A. Hospodkova and E. Hulicius and J. Pangrac},
  journal= {arXiv preprint arXiv:0708.1468},
  year   = {2007}
}

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Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots

Abstract

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