Size Distribution and Its Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy

X. M. Lu; M. Koyama; Y. Izumi; Y. Nakata; S. Adachi; S. Muto

doi:10.7567/JJAP.52.025602

Size Distribution and Its Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy

Materials Science 2015-06-05 v1 Mesoscale and Nanoscale Physics

Authors: X. M. Lu , M. Koyama , Y. Izumi , Y. Nakata , S. Adachi , S. Muto

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Abstract

We studied the size distribution and its scaling behavior of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs with the Stranski-Krastanov (SK) mode by molecular beam epitaxy (MBE), at both 480{\deg}C and 510{\deg}C, as a function of InAlAs coverage. A scaling function of the volume was found for the first time in ternary alloy QDs. The function was similar to that of InAs/GaAs QDs, which agreed with the scaling function for the two-dimensional submonolayer homoepitaxy simulation with a critical island size of i = 1. However, a character of i = 0 was also found as a tail in the large volume.

Keywords

quantum dots size distribution scaling behavior molecular beam epitaxy InAlAs/AlGaAs Stranski-Krastanov mode

Cite

@article{arxiv.1208.0109,
  title  = {Size Distribution and Its Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy},
  author = {X. M. Lu and M. Koyama and Y. Izumi and Y. Nakata and S. Adachi and S. Muto},
  journal= {arXiv preprint arXiv:1208.0109},
  year   = {2015}
}

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19 pages, 6 figures

Size Distribution and Its Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy

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