III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.
@article{arxiv.1802.07808,
title = {Field effect enhancement in buffered quantum nanowire networks},
author = {Filip Krizek and Joachim E. Sestoft and Pavel Aseev and Sara Marti-Sanchez and Saulius Vaitiekenas and Lucas Casparis and Sabbir A. Khan and Yu Liu and Tomas Stankevic and Alexander M. Whiticar and Alexandra Fursina and Frenk Boekhout and Rene Koops and Emanuele Uccelli and Leo P. Kouwenhoven and Charles M. Marcus and Jordi Arbiol and Peter Krogstrup},
journal= {arXiv preprint arXiv:1802.07808},
year = {2018}
}