We report the growth, structural characterization, and transport properties of the quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3 (VBST) grown on a GaAs buffer layer by molecular beam epitaxy on a GaAs(111)A substrate. X-ray diffraction and transmission electron microscopy show that the implementation of a GaAs buffer layer improves the crystal and interface quality compared to the control sample grown directly on an InP substrate. Both samples exhibit the quantum anomalous Hall effect (QAHE), but with similar thermal stability despite the different structural properties. Notably, the QAHE in the sample grown on a GaAs buffer layer displays a significantly larger (almost double) coercive field with a much smaller resistivity peak at the magnetization reversal. Possible effects of the interface quality on the magnetic properties of VBST and the QAHE are discussed.
@article{arxiv.2407.12268,
title = {Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3},
author = {Yusuke Nakazawa and Takafumi Akiho and Kiyoshi Kanisawa and Hiroshi Irie and Norio Kumada and Koji Muraki},
journal= {arXiv preprint arXiv:2407.12268},
year = {2024}
}
Comments
16 pages, 4 figures. The following article has been accepted by Applied Physics Letter. After it is published, it will be found at https://pubs.aip.org/aip/apl