The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.
@article{arxiv.1605.08829,
title = {Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator},
author = {Cui-Zu Chang and Jinsong Zhang and Xiao Feng and Jie Shen and Zuocheng Zhang and Minghua Guo and Kang Li and Yunbo Ou and Pang Wei and Li-Li Wang and Zhong-Qing Ji and Yang Feng and Shuaihua Ji and Xi Chen and Jinfeng Jia and Xi Dai and Zhong Fang and Shou-Cheng Zhang and Ke He and Yayu Wang and Li Lu and Xu-Cun Ma and Qi-Kun Xu},
journal= {arXiv preprint arXiv:1605.08829},
year = {2016}
}