Molecular-beam epitaxy of GaSb on 6{\textdegree}-offcut (001) Si using a GaAs nucleation layer

M. Rio Calvo; J-B Rodriguez; L. Cerutti; M. Ramonda; G. Patriarche; E. Tournié

doi:10.1016/j.jcrysgro.2019.125299

Molecular-beam epitaxy of GaSb on 6{\textdegree}-offcut (001) Si using a GaAs nucleation layer

Materials Science 2019-10-25 v1

Authors: M. Rio Calvo , J-B Rodriguez , L. Cerutti , M. Ramonda , G. Patriarche , E. Tournié

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Abstract

We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high density of small GaAs islands forming a quasi-two-dimensional layer. GaSb then nucleated atop this layer as three-dimensional islands before turning to two-dimensional growth within a few nanometers. Moreover, reflexion high-energy electron diffraction revealed a fast relaxation of GaAs on Si and of GaSb on GaAs. The GaSb layer quality was better than that of similar layers grown on Si through AlSb nucleation layers.

Keywords

molecular beam epitaxy gasb gaas nucleation layer vicinal (001) si reflexion high-energy electron diffraction strain relaxation epitaxial quality

Cite

@article{arxiv.1910.11201,
  title  = {Molecular-beam epitaxy of GaSb on 6{\textdegree}-offcut (001) Si using a GaAs nucleation layer},
  author = {M. Rio Calvo and J-B Rodriguez and L. Cerutti and M. Ramonda and G. Patriarche and E. Tournié},
  journal= {arXiv preprint arXiv:1910.11201},
  year   = {2019}
}

Molecular-beam epitaxy of GaSb on 6{\textdegree}-offcut (001) Si using a GaAs nucleation layer

Abstract

Keywords

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