2H-TaS2 few layers have been grown epitaxially onto GaN(0001). A high substrate growth temperature of 825∘C induces best structural properties of the overlayer, as revealed by in-situ electron diffraction (RHEED and LEED). The 2D-overlayer grows unstrained right after deposition of a monolayer. However, evidence of pits at the interface is provided by scanning transmission electron microscopy, most probably due to GaN thermal decomposition at the high growth temperature. In-situ x-ray photoemission spectroscopy shows core level shifts that are consistently related to electron transfer from the n-GaN(0001) to the 2H-TaS2 epitaxial layer as well as the formation of a high concentration of nitrogen vacancies close to the interface. Further, no chemical reaction at the interface between the substrate and the grown TaS2 overlayer is deduced from XPS, which corroborates the possibility of integration of 2D 2H-TaS2 with an important 3D semiconducting material like GaN.
@article{arxiv.2508.21537,
title = {Molecular Beam Epitaxy of 2H-TaS$_2$ few-layers on GaN(0001)},
author = {Constantin Hilbrunner and Tobias Meyer and Joerg Malindretos and Angela Rizzi},
journal= {arXiv preprint arXiv:2508.21537},
year = {2025}
}