We report epitaxial growth of vanadium diselenide (VSe2) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe2 films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe2, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.
@article{arxiv.2004.05506,
title = {Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy},
author = {Tiancong Zhu and Dante J. O'Hara and Brenton A. Noesges and Menglin Zhu and Jacob J. Repicky and Mark R. Brenner and Leonard J. Brillson and Jinwoo Hwang and Jay A. Gupta and Roland K. Kawakami},
journal= {arXiv preprint arXiv:2004.05506},
year = {2020}
}