In situ x-ray diffraction study of epitaxial growth of ordered Fe3Si films

Bernd Jenichen; Vladimir Kaganer; Wolfgang Braun; Roman Shayduk; Bradley Tinkham; Jens Herfort

doi:10.1007/s10854-007-9530-z

In situ x-ray diffraction study of epitaxial growth of ordered Fe3Si films

Materials Science 2012-06-12 v3

Authors: Bernd Jenichen , Vladimir Kaganer , Wolfgang Braun , Roman Shayduk , Bradley Tinkham , Jens Herfort

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and substrate temperatures near 200 degrees Celsius. A damping of x-ray intensity oscillations due to a gradual surface roughening during growth is found. The corresponding sequence of coverages of the different terrace levels is obtained. The after-deposition surface recovery is very slow. Annealing at 310 degrees Celsius combined with the deposition of one monolayer of Fe3Si restores the surface to high perfection and minimal roughness. Our stoichiometric films possess long-range order and a high quality heteroepitaxial interface.

Keywords

fe3si films molecular beam epitaxy in situ x-ray diffraction grazing incidence epitaxial growth surface roughening heteroepitaxial interface

Cite

@article{arxiv.0712.2180,
  title  = {In situ x-ray diffraction study of epitaxial growth of ordered Fe3Si films},
  author = {Bernd Jenichen and Vladimir Kaganer and Wolfgang Braun and Roman Shayduk and Bradley Tinkham and Jens Herfort},
  journal= {arXiv preprint arXiv:0712.2180},
  year   = {2012}
}

Comments

8 pages, 3 figures

In situ x-ray diffraction study of epitaxial growth of ordered Fe3Si films

Abstract

Keywords

Cite

Comments

Related papers