Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy

B. Li; W. G. Chen; X. Guo; W. K. Ho; X. Q. Dai; J. F. Jia; M. H. Xie

doi:10.1016/j.apsusc.2016.11.189

Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy

Materials Science 2017-01-04 v3

Authors: B. Li , W. G. Chen , X. Guo , W. K. Ho , X. Q. Dai , J. F. Jia , M. H. Xie

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Abstract

High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2Se3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we have revealed the strong chemical bonding at the interface of Bi2Se3 and In2Se3 by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.

Keywords

Bi2Se3 strain relaxation molecular-beam epitaxy topological insulator first-principle method

Cite

@article{arxiv.1606.06227,
  title  = {Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy},
  author = {B. Li and W. G. Chen and X. Guo and W. K. Ho and X. Q. Dai and J. F. Jia and M. H. Xie},
  journal= {arXiv preprint arXiv:1606.06227},
  year   = {2017}
}

Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy

Abstract

Keywords

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