Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

A. Richardella; D. M. Zhang; J. S. Lee; A. Koser; D. W. Rench; A. L. Yeats; B. B. Buckley; D. D. Awschalom; N. Samarth

doi:10.1063/1.3532845

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Materials Science 2011-12-08 v1

Authors: A. Richardella , D. M. Zhang , J. S. Lee , A. Koser , D. W. Rench , A. L. Yeats , B. B. Buckley , D. D. Awschalom , N. Samarth

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Abstract

We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.

Keywords

Bi2Se3 heteroepitaxy GaAs (111)B molecular beam epitaxy topological insulator Kerr rotation spin dynamics

Cite

@article{arxiv.1012.1918,
  title  = {Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B},
  author = {A. Richardella and D. M. Zhang and J. S. Lee and A. Koser and D. W. Rench and A. L. Yeats and B. B. Buckley and D. D. Awschalom and N. Samarth},
  journal= {arXiv preprint arXiv:1012.1918},
  year   = {2011}
}

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To appear in Applied Physics Letters

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Abstract

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