Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Guanhua Zhang; Huajun Qin; Jing Teng; Jiandong Guo; Qinlin Guo; Xi Dai; Zhong Fang; Kehui Wu

doi:10.1063/1.3200237

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Mesoscale and Nanoscale Physics 2010-05-03 v1 Strongly Correlated Electrons

Authors: Guanhua Zhang , Huajun Qin , Jing Teng , Jiandong Guo , Qinlin Guo , Xi Dai , Zhong Fang , Kehui Wu

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Abstract

We report the growth of atomically smooth, single crystalline Bi2Se3 thin films on Si(111) by using molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, X-ray photoelectron emission spectroscopy and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The film grows in a self-organized quintuple-layer by quintuple-layer mode, and atomically smooth film can be obtained with the thickness down to one quintuple-layer (~1nm).

Keywords

topological insulator bi2se3 thin film molecular beam epitaxy quintuple-layer scanning tunneling microscopy raman spectroscopy

Cite

@article{arxiv.0906.5306,
  title  = {Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator},
  author = {Guanhua Zhang and Huajun Qin and Jing Teng and Jiandong Guo and Qinlin Guo and Xi Dai and Zhong Fang and Kehui Wu},
  journal= {arXiv preprint arXiv:0906.5306},
  year   = {2010}
}

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12 pages, 5 figures

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Abstract

Keywords

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