Fine tuning epitaxial strain in ferroelectrics: PbxSr(1-x)TiO3 on DyScO3

Gijsbert Rispens; Jeroen A. Heuver; Beatriz Noheda

doi:10.1063/1.3532103

Fine tuning epitaxial strain in ferroelectrics: PbxSr(1-x)TiO3 on DyScO3

Materials Science 2015-05-20 v1

Authors: Gijsbert Rispens , Jeroen A. Heuver , Beatriz Noheda

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Abstract

Epitaxial strain can be used to modify the properties of ferroelectric thin films. From the experimental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrate how, by using a suitable combination of composition and substrate, the magnitude of the epitaxial strain can be controlled in a continuous manner. The phase diagram of PbxSr1-xTiO3 films grown epitaxially on (110)-DyScO3 is calculated using a Devonshire-Landau approach. A boundary between in-plane and out-of-plane oriented ferroelectric phases is predicted to take place at $x \approx$ 0.8. A series of PbxSr1-xTiO3 films grown by MBE show good agreement with the proposed phase diagram

Keywords

epitaxial strain ferroelectric thin films PbxSr1-xTiO3 DyScO3 substrate Devonshire-Landau theory phase diagram molecular beam epitaxy

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@article{arxiv.1011.4458,
  title  = {Fine tuning epitaxial strain in ferroelectrics: PbxSr(1-x)TiO3 on DyScO3},
  author = {Gijsbert Rispens and Jeroen A. Heuver and Beatriz Noheda},
  journal= {arXiv preprint arXiv:1011.4458},
  year   = {2015}
}

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The following article has been submitted to Applied Physics Letters

Fine tuning epitaxial strain in ferroelectrics: PbxSr(1-x)TiO3 on DyScO3

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