Formation of Epitaxial MnBi Layers on (Ga,Mn)As

J. Adell; M. Adell; I. Ulfat; L. Ilver; J. Sadowski; J. Kanski

doi:10.1103/PhysRevB.80.075204

Formation of Epitaxial MnBi Layers on (Ga,Mn)As

Materials Science 2015-05-13 v1

Authors: J. Adell , M. Adell , I. Ulfat , L. Ilver , J. Sadowski , J. Kanski

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Abstract

The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of MnBi before clear surface degradation occurs.

Keywords

epitaxial growth MnBi GaMnAs photoelectron spectroscopy surface core level shifts surface reconstruction thin films

Cite

@article{arxiv.0903.1266,
  title  = {Formation of Epitaxial MnBi Layers on (Ga,Mn)As},
  author = {J. Adell and M. Adell and I. Ulfat and L. Ilver and J. Sadowski and J. Kanski},
  journal= {arXiv preprint arXiv:0903.1266},
  year   = {2015}
}

Comments

18 pages, 5 figures

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