Analysing surface structures on (Ga,Mn)As by Atomic Force Microscopy

S. Piano; A. W. Rushforth; K. W. Edmonds; R. P. Campion; G. Adesso; B. L. Gallagher

doi:10.1166/jnn.2012.6553

Analysing surface structures on (Ga,Mn)As by Atomic Force Microscopy

Materials Science 2012-09-06 v1 Mesoscale and Nanoscale Physics Quantum Physics

Authors: S. Piano , A. W. Rushforth , K. W. Edmonds , R. P. Campion , G. Adesso , B. L. Gallagher

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Abstract

Using atomic force microscopy, we have studied the surface structures of high quality molecular beam epitaxy grown (Ga,Mn)As compound. Several samples with different thickness and Mn concentration, as well as a few (Ga,Mn)(As,P) samples have been investigated. All these samples have shown the presence of periodic ripples aligned along the $[1\bar{1}0]$ direction. From a detailed Fourier analysis we have estimated the period (~50 nm) and the amplitude of these structures.

Keywords

semiconductor nanowire growth surface science

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@article{arxiv.1111.3685,
  title  = {Analysing surface structures on (Ga,Mn)As by Atomic Force Microscopy},
  author = {S. Piano and A. W. Rushforth and K. W. Edmonds and R. P. Campion and G. Adesso and B. L. Gallagher},
  journal= {arXiv preprint arXiv:1111.3685},
  year   = {2012}
}

Comments

5 pages, 2 figures, 2 tables. To appear in J. Nanosci. Nanotechnol. (special issue for the RTNSA conference 2011)

Analysing surface structures on (Ga,Mn)As by Atomic Force Microscopy

Abstract

Keywords

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