The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi growth on the A face (In-terminated InAs) is epitaxial, contrary to that on the B face (As- terminated InAs) that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a ≈10~BL deposit on the A face is identical to that of bulk Bi, while more than ≈30 BL are needed for the B face. Both bulk and surface states are well accounted for by fully relativistic ab initio spin-resolved photoemission calculations.
@article{arxiv.1807.00306,
title = {Bi monocrystal formation on InAs(111)A and B substrates},
author = {L. Nicolaï and J. -M. Mariot and U. Djukic and W. Wang and O. Heckmann and M. C. Richter and J. Kanski and M. Leandersson and J. Sadowski and T. Balasubramanian and I. Vobornik and J. Fujii and J. Braun and H. Ebert and J. Minár and K. Hricovini},
journal= {arXiv preprint arXiv:1807.00306},
year = {2018}
}