Optical characterization of GaN by N+ implantation into GaAs at elevated temperature

S. Dhara; P. Magudapathy; R. Kesavamoorthy; S. Kalavathi; K. G. M. Nair; G. M. Hsu; L. C. Chen; K. H. Chen; K. Santhakumar; T. Soga

doi:10.1063/1.2099542

Optical characterization of GaN by N+ implantation into GaAs at elevated temperature

Materials Science 2007-08-17 v1

Authors: S. Dhara , P. Magudapathy , R. Kesavamoorthy , S. Kalavathi , K. G. M. Nair , G. M. Hsu , L. C. Chen , K. H. Chen , K. Santhakumar , T. Soga

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Abstract

Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2x1017 cm-2. Temperature-dependent photoluminescence study showed sharp direct band-to-band transition peak ~3.32 eV at temperature <= 200K. The intermediate bandgap value, with respect to ~3.4 eV for hexagonal and ~3.27 eV for cubic phases of GaN is an indicative for the formation of mixed hexagonal and cubic phases.

Keywords

GaN ion implantation GaAs optical characterization photoluminescence wurtzite zinc blend

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@article{arxiv.0708.2211,
  title  = {Optical characterization of GaN by N+ implantation into GaAs at elevated temperature},
  author = {S. Dhara and P. Magudapathy and R. Kesavamoorthy and S. Kalavathi and K. G. M. Nair and G. M. Hsu and L. C. Chen and K. H. Chen and K. Santhakumar and T. Soga},
  journal= {arXiv preprint arXiv:0708.2211},
  year   = {2007}
}

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9 pages, 4 figuresn Journal

Optical characterization of GaN by N+ implantation into GaAs at elevated temperature

Abstract

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