Integrated GaN photonic circuits on silicon (100) for second harmonic generation
Optics
2014-01-21 v1 Materials Science
Abstract
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of \{chi}(2) enabled sum-/difference-frequency processes.
Cite
@article{arxiv.1401.4798,
title = {Integrated GaN photonic circuits on silicon (100) for second harmonic generation},
author = {Chi Xiong and Wolfram Pernice and Kevin K. Ryu and Carsten Schuck and King Y. Fong and Tomas Palacios and Hong X. Tang},
journal= {arXiv preprint arXiv:1401.4798},
year = {2014}
}