InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ~1.06 eV at temperatures <=150K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.
@article{arxiv.0708.2221,
title = {Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature},
author = {S. Dhara and P. Magudapathy and R. Kesavamoorthy and S. Kalavathi and V. S. Sastry and K. G. M. Nair and G. M. Hsu and L. C. Chen and K. H. Chen and K. Santhakumar and T. Soga},
journal= {arXiv preprint arXiv:0708.2221},
year = {2007}
}