Catalyst-free selective area growth of InN nanocolumns by MBE

C. Denker; J. Malindretos; B. Landgraf; A. Rizzi

Catalyst-free selective area growth of InN nanocolumns by MBE

Materials Science 2009-05-20 v1 Mesoscale and Nanoscale Physics

Authors: C. Denker , J. Malindretos , B. Landgraf , A. Rizzi

Abstract

Selective area growth of InN nanorods by plasma assisted molecular beam epitaxy is demonstrated. Molybdenum is found to be a suitable mask material at the low substrate temperature of 475 C needed for the growth of InN nanocolumns. The growth of arrays of single nanorods on a Si(111) substrate has been achieved with a thin molybdenum mask lithographically patterned with holes smaller than 60 nm.

Keywords

InN nanocolumns selective area growth MBE molybdenum mask nanorods

Cite

@article{arxiv.0905.3133,
  title  = {Catalyst-free selective area growth of InN nanocolumns by MBE},
  author = {C. Denker and J. Malindretos and B. Landgraf and A. Rizzi},
  journal= {arXiv preprint arXiv:0905.3133},
  year   = {2009}
}

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