Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth

S. Keating; M. G. Urquhart; D. V. P. McLaughlin; J. M. Pearce

doi:10.1021/cg101450n

Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth

Materials Science 2012-03-06 v1 Mesoscale and Nanoscale Physics Other Condensed Matter

Authors: S. Keating , M. G. Urquhart , D. V. P. McLaughlin , J. M. Pearce

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Abstract

Indium gallium nitride films with nanocolumnar microstructure were deposited with varying indium content and substrate temperatures using plasma-enhanced evaporation on amorphous SiO2 substrates. FESEM and XRD results are presented, showing that more crystalline nanocolumnar microstructures can be engineered at lower indium compositions. Nanocolumn diameter and packing factor (void fraction) was found to be highly dependent on substrate temperature, with thinner and more closely packed nanocolumns observed at lower substrate temperatures.

Keywords

indium gallium nitride nanocolumn substrate temperature crystal growth plasma-enhanced evaporation microstructure

Cite

@article{arxiv.1203.0645,
  title  = {Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth},
  author = {S. Keating and M. G. Urquhart and D. V. P. McLaughlin and J. M. Pearce},
  journal= {arXiv preprint arXiv:1203.0645},
  year   = {2012}
}

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