The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from |g*|=3.8 +/- 0.2 for the third subband to |g*|=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures.
@article{arxiv.0805.0504,
title = {Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts},
author = {T. P. Martin and A. Szorkovszky and A. P. Micolich and A. R. Hamilton and C. A. Marlow and H. Linke and R. P. Taylor and L. Samuelson},
journal= {arXiv preprint arXiv:0805.0504},
year = {2009}
}
Comments
[Version 2] Revtex4, 11 pages, 3 figures, accepted for publication in Applied Physics Letters