We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-switch. This, combined with the strong diode effect, ~100, offers a new device that should be promising for such technologies as magnetic random access memory and re-programmable logic.
@article{arxiv.0705.2375,
title = {Spin Diode Based on Fe/MgO Double Tunnel Junction},
author = {A. Iovan and S. Andersson and Yu. G. Naidyuk and A. Vedyaev and B. Dieny and V. Korenivski},
journal= {arXiv preprint arXiv:0705.2375},
year = {2015}
}