Sensitivity of spin-torque diodes for frequency-tunable resonant microwave detection

C. Wang; Y. -T. Cui; J. Z. Sun; J. A. Katine; R. A. Buhrman; D. C. Ralph

doi:10.1063/1.3197137

Sensitivity of spin-torque diodes for frequency-tunable resonant microwave detection

Mesoscale and Nanoscale Physics 2015-05-13 v1

Authors: C. Wang , Y. -T. Cui , J. Z. Sun , J. A. Katine , R. A. Buhrman , D. C. Ralph

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Abstract

We calculate the efficiency with which magnetic tunnel junctions can be used as resonant detectors of incident microwave radiation via the spin-torque diode effect. The expression we derive is in good agreement with the sensitivities we measure for MgO-based magnetic tunnel junctions with an extended (unpatterned) magnetic pinned layer. However, the measured sensitivities are reduced below our estimate for a second set of devices in which the pinned layer is a patterned synthetic antiferromagnet (SAF). We suggest that this reduction may be due to an undesirable coupling between the magnetic free layer and one of the magnetic layers within the etched SAF. Our calculations suggest that optimized tunnel junctions should achieve sensitivities for resonant detection exceeding 10,000 mV/mW.

Keywords

magnetic tunnel junctions magnetic resonance microwave resonators

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@article{arxiv.0905.1912,
  title  = {Sensitivity of spin-torque diodes for frequency-tunable resonant microwave detection},
  author = {C. Wang and Y. -T. Cui and J. Z. Sun and J. A. Katine and R. A. Buhrman and D. C. Ralph},
  journal= {arXiv preprint arXiv:0905.1912},
  year   = {2015}
}

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17 pages, 2 figures

Sensitivity of spin-torque diodes for frequency-tunable resonant microwave detection

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