The optimum condition of an applied field direction to maximize spin torque diode voltage was theoretically derived for a magnetic tunnel junction with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer. We found that the diode voltage for a relatively small applied field is maximized when the projection of the applied field to the film-plane is parallel or anti-parallel to the magnetization of the pinned layer. However, by increasing the applied field magnitude, the optimum applied field direction shifts from the parallel or anti-parallel direction. These analytical predictions were confirmed by numerical simulations.
@article{arxiv.1308.1170,
title = {Dependence of spin torque diode voltage on applied field direction},
author = {Tomohiro Taniguchi and Hiroshi Imamura},
journal= {arXiv preprint arXiv:1308.1170},
year = {2013}
}