Electrical Spin Injection into Silicon using MgO Tunnel Barrier

Tomoyuki Sasaki; Tohru Oikawa; Toshio Suzuki; Masashi Shiraishi; Yoshishige Suzuki; Katsumichi Tagami

doi:10.1143/APEX.2.053003

Electrical Spin Injection into Silicon using MgO Tunnel Barrier

Materials Science 2015-05-13 v1 Other Condensed Matter

Authors: Tomoyuki Sasaki , Tohru Oikawa , Toshio Suzuki , Masashi Shiraishi , Yoshishige Suzuki , Katsumichi Tagami

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin valve structure were fabricated on phosphorous doped silicon-on-insulator substrate. Spin injection signals in the non-local scheme were observed up to 120K, which is the highest value where band transferred spins in Si have ever been reported, and spin diffusion length was estimated to be about 2.25um at 8K. Temperature dependence and injection current dependence of the non-local voltage were also investigated. It is clarified that MgO tunnel barrier is effective for the spin injection into silicon.

Cite

@article{arxiv.0905.0942,
  title  = {Electrical Spin Injection into Silicon using MgO Tunnel Barrier},
  author = {Tomoyuki Sasaki and Tohru Oikawa and Toshio Suzuki and Masashi Shiraishi and Yoshishige Suzuki and Katsumichi Tagami},
  journal= {arXiv preprint arXiv:0905.0942},
  year   = {2015}
}

Comments

15pages, 4 figures. To appear in Applied Physics Express

Electrical Spin Injection into Silicon using MgO Tunnel Barrier

Abstract

Cite

Comments

Related papers