Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature

Tomoyuki Sasaki; Toshio Suzuki; Yuichiro Ando; Hayato Koike; Tohru Oikawa; Yoshishige Suzuki; Masashi Shiraishi

doi:10.1063/1.4863818

Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature

Materials Science 2015-06-18 v1 Mesoscale and Nanoscale Physics

Authors: Tomoyuki Sasaki , Toshio Suzuki , Yuichiro Ando , Hayato Koike , Tohru Oikawa , Yoshishige Suzuki , Masashi Shiraishi

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Abstract

Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the non-local magnetoresistance is estimated to be 0.0057 ohm at room temperature. As a result, a clear rectangle signal is observed in local magnetoresistance measurement even at room temperature. We also investigate the origin of local magnetoresistance by measuring the spin accumulation voltage of each contact separately.

Keywords

local magnetoresistance lateral spin valve Fe/MgO/Si spin injection tunnel barrier room temperature spin accumulation

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@article{arxiv.1401.1279,
  title  = {Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature},
  author = {Tomoyuki Sasaki and Toshio Suzuki and Yuichiro Ando and Hayato Koike and Tohru Oikawa and Yoshishige Suzuki and Masashi Shiraishi},
  journal= {arXiv preprint arXiv:1401.1279},
  year   = {2015}
}

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16pages, 3figures

Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature

Abstract

Keywords

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