Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Mariusz Ciorga; Christian Wolf; Andreas Einwanger; Martin Utz; Dieter Schuh; Dieter Weiss

Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Materials Science 2010-11-11 v1

Authors: Mariusz Ciorga , Christian Wolf , Andreas Einwanger , Martin Utz , Dieter Schuh , Dieter Weiss

Abstract

We report on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of interplay between spin-transport-related contribution and tunneling anisotropic magnetoresistance of magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ohm which is twice the magnitude of the measured non-local signal.

Keywords

local spin valve effect Esaki diode spin injection tunneling anisotropic magnetoresistance GaMnAs GaAs semiconductor spintronics

Cite

@article{arxiv.1011.2356,
  title  = {Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices},
  author = {Mariusz Ciorga and Christian Wolf and Andreas Einwanger and Martin Utz and Dieter Schuh and Dieter Weiss},
  journal= {arXiv preprint arXiv:1011.2356},
  year   = {2010}
}

Comments

submitted to Appl. Phys. Lett

Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Abstract

Keywords

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