Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers

M. Zhu; M. J. Wilson; B. L. Sheu; P. Mitra; P. Schiffer; N. Samarth

doi:10.1063/1.2806966

Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers

Materials Science 2010-07-14 v1

Authors: M. Zhu , M. J. Wilson , B. L. Sheu , P. Mitra , P. Schiffer , N. Samarth

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Abstract

We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAs/p- GaAs/(Ga,Mn)As trilayers show that the exchange coupling diminishes with spatial separation between the layers.

Keywords

spintronics magnetocaloric effect magnetoresistance

Cite

@article{arxiv.0708.2092,
  title  = {Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers},
  author = {M. Zhu and M. J. Wilson and B. L. Sheu and P. Mitra and P. Schiffer and N. Samarth},
  journal= {arXiv preprint arXiv:0708.2092},
  year   = {2010}
}

Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers

Abstract

Keywords

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