We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.
@article{arxiv.cond-mat/0505015,
title = {Exchange Biasing of the Ferromagnetic Semiconductor (Ga,Mn)As by MnO},
author = {K. F. Eid and M. B. Stone and O. Maksimov and T. C. Shih and K. C. Ku and W. Fadgen and C. J. Palmstrom and P. Schiffer and N. Samarth},
journal= {arXiv preprint arXiv:cond-mat/0505015},
year = {2009}
}
Comments
To appear in J. Appl. Phys. (invited paper in Proceedings of the 49th Annual Conference on Magnetism & Magnetic Materials); pdf file only