Interlayer exchange coupling in (Ga,Mn)As based multilayers

A. D. Giddings; T. Jungwirth; B. L. Gallagher

doi:10.1002/pssc.200672834

Interlayer exchange coupling in (Ga,Mn)As based multilayers

Materials Science 2008-09-03 v1

Authors: A. D. Giddings , T. Jungwirth , B. L. Gallagher

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Abstract

Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.

Keywords

magnetoresistance

Cite

@article{arxiv.cond-mat/0610696,
  title  = {Interlayer exchange coupling in (Ga,Mn)As based multilayers},
  author = {A. D. Giddings and T. Jungwirth and B. L. Gallagher},
  journal= {arXiv preprint arXiv:cond-mat/0610696},
  year   = {2008}
}

Comments

4 pages, 2 figures. To be published in physica status solidi c as the proceedings of the PASPS IV conference

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