We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (T_B = 48 +- 2 K) and the Curie temperature of the ferromagnet (T_C = 55.1 +- 0.2 K) are comparable. The resulting exchange bias manifests itself as a clear shift in the magnetization hysteresis loop when the bilayer is cooled in the presence of an applied magnetic field and an enhancement of the coercive field.
@article{arxiv.cond-mat/0312259,
title = {Exchange Biasing of the Ferromagnetic Semiconductor Ga1-xMnxAs},
author = {K. F. Eid and M. B. Stone and K. C. Ku and P. Schiffer and N. Samarth and T. C. Shih and C. J. Palmstrom},
journal= {arXiv preprint arXiv:cond-mat/0312259},
year = {2009}
}
Comments
pdf file only; submitted to Applied Physics Letters