Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In-plane magnetoresistance showed spin-valve-type hysteretic behavior, when the measurements were performed with constant source-drain and source-gate biases. By comparing with the magnetization-related resistance change resulting from the MnAs contacts, we conclude that the spin-polarized electrons are injected from the MnAs source into the Si MOS inversion channel, and detected by the MnAs drain.
@article{arxiv.1002.0057,
title = {Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts},
author = {Ryosho. Nakane and Tomoyuki Harada and Kuniaki Sugiura and Satoshi Sugahara and Masaaki Tanaka},
journal= {arXiv preprint arXiv:1002.0057},
year = {2010}
}