Theoretical study of spin-dependent transport in WSe$_2$-based vertical spin valves
Abstract
We theoretically investigate spin-dependent transport in a TMD-based vertical spin valve, taking WSe as a representative example. Using effective Hamiltonians for the heterostructure and the Landauer formula, we derive the transmission and reflection coefficients within a transfer-matrix approach. The calculated magnetoresistance shows an oscillatory dependence on the WSe thickness when the Fermi level is tuned near the valence-band maximum. The effects of gate voltage and exchange fields on the magnetoresistance are further analyzed. We also identify a Fabry-P\'erot-like interference contribution to the magnetoresistance, which can enhance or even induce negative magnetoresistance in certain thickness regimes. Our results provide a qualitative understanding of the negative magnetoresistance observed in WSe-based spin valves and may offer useful insights for the design of tunable spintronic devices.
Cite
@article{arxiv.2604.03762,
title = {Theoretical study of spin-dependent transport in WSe$_2$-based vertical spin valves},
author = {Yibo Wang and Yuchen Liu and Xinhe Wang and Wang Yang},
journal= {arXiv preprint arXiv:2604.03762},
year = {2026}
}
Comments
16 pages, 7 figures