Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride

Xurui Zhang; Vivek Kakani; John M. Woods; Judy J. Cha; Xiaoyan Shi

doi:10.1103/PhysRevB.104.165126

Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride

Materials Science 2021-10-27 v1

Authors: Xurui Zhang , Vivek Kakani , John M. Woods , Judy J. Cha , Xiaoyan Shi

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Abstract

We investigate the electronic structure of tungsten ditelluride (WTe $_2$ ) flakes with different thicknesses in magneto-transport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the `turn-on' behavior and large positive MR. The Shubnikov-de-Haas oscillation studies further confirm the thickness-dependent change of electronic structure of WTe $_2$ and reveal a possible temperature-sensitive electronic structure change. Finally, we report the thickness-dependent anisotropy of Fermi surface, which reveals that multi-layer WTe $_2$ is an electronic 3D material and the anisotropy decreases as thickness decreases.

Keywords

tungsten ditelluride magneto-transport thickness dependence shubnikov-de-haas oscillation fermi surface anisotropy carrier balance

Cite

@article{arxiv.2104.14464,
  title  = {Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride},
  author = {Xurui Zhang and Vivek Kakani and John M. Woods and Judy J. Cha and Xiaoyan Shi},
  journal= {arXiv preprint arXiv:2104.14464},
  year   = {2021}
}

Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride

Abstract

Keywords

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